APT5030AN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT5030AN
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 522 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: TO-3
Búsqueda de reemplazo de APT5030AN MOSFET
APT5030AN Datasheet (PDF)
apt5030avr.pdf

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apt5030bn.pdf

DTO-247GAPT5025BN 500V 23.0A 0.25SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5025BN 5030BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C23 21AmpsIDM Pulsed Drain Current 192 84V
apt5032cvr.pdf

APT5032CVR500V 14A 0.320POWER MOS VTO-254TO-254Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested
Otros transistores... APT5022BN , APT5024BLL , APT5024BLLG , APT5024SFLL , APT5024SFLLG , APT5024SLL , APT5024SVFRG , APT5025AN , 2N7002 , APT5030BN , APT5040KFLLG , APT50M50JLL , APT50M50L2FLLG , APT50M50L2LLG , APT50M60JVFR , APT50M60JVR , APT50M60L2VFRG .
History: HAT1096C | HY150N075T | DAMH160N200 | MSK7804 | CS4N65A3HD | 2SK1020 | BSC320N20NS3G
History: HAT1096C | HY150N075T | DAMH160N200 | MSK7804 | CS4N65A3HD | 2SK1020 | BSC320N20NS3G



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