APT5030AN Specs and Replacement
Type Designator: APT5030AN
Type of Transistor: MOFETS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 522 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-3
APT5030AN substitution
- MOSFET ⓘ Cross-Reference Search
APT5030AN datasheet
apt5030avr.pdf
APT5030AVR 500V 14.7A 0.300 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower... See More ⇒
apt5030bn.pdf
D TO-247 G APT5025BN 500V 23.0A 0.25 S APT5030BN 500V 21.0A 0.30 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 5025BN 5030BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25 C 23 21 Amps IDM Pulsed Drain Current 1 92 84 V... See More ⇒
Detailed specifications: APT5022BN, APT5024BLL, APT5024BLLG, APT5024SFLL, APT5024SFLLG, APT5024SLL, APT5024SVFRG, APT5025AN, MMIS60R580P, APT5030BN, APT5040KFLLG, APT50M50JLL, APT50M50L2FLLG, APT50M50L2LLG, APT50M60JVFR, APT50M60JVR, APT50M60L2VFRG
Keywords - APT5030AN MOSFET specs
APT5030AN cross reference
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