RF1S9640SM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S9640SM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO263AB
Búsqueda de reemplazo de RF1S9640SM MOSFET
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RF1S9640SM datasheet
irf9640 rf1s9640sm.pdf
IRF9640, RF1S9640SM Data Sheet January 2002 11A, 200V, 0.500 Ohm, P-Channel Power Features MOSFETs 11A, 200V These are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500 power field-effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
irf9630 rf1s9630sm.pdf
IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs 6.5A, 200V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a
irf9540 rf1s9540sm.pdf
IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs 19A, 100V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
Otros transistores... RF1S60P03SM, RF1S630SM, RF1S640SM, RF1S70N03SM, RF1S70N06SM, RF1S9530SM, RF1S9540SM, RF1S9630SM, STP65NF06, RFB18N10CS, RFD10P03L, RFD10P03LSM, RFD12N06RLE, RFD12N06RLESM, RFD14N05, RFD14N05L, RFD14N05LSM
History: AOT1100L
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