RF1S9640SM. Аналоги и основные параметры

Наименование производителя: RF1S9640SM

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm

Тип корпуса: TO263AB

Аналог (замена) для RF1S9640SM

- подборⓘ MOSFET транзистора по параметрам

 

RF1S9640SM даташит

 ..1. Size:103K  fairchild semi
 irf9640 rf1s9640sm.pdf pdf_icon

RF1S9640SM

IRF9640, RF1S9640SM Data Sheet January 2002 11A, 200V, 0.500 Ohm, P-Channel Power Features MOSFETs 11A, 200V These are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500 power field-effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 8.1. Size:103K  fairchild semi
 irf9630 rf1s9630sm.pdf pdf_icon

RF1S9640SM

IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs 6.5A, 200V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a

 8.2. Size:406K  harris semi
 irf9630 irf9631 irf9632 irf9633 rf1s9630.pdf pdf_icon

RF1S9640SM

 9.1. Size:99K  fairchild semi
 irf9540 rf1s9540sm.pdf pdf_icon

RF1S9640SM

IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs 19A, 100V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

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