APT50M60L2VRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50M60L2VRG
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 833 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 77 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 1800 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO-264MAX
Búsqueda de reemplazo de APT50M60L2VRG MOSFET
APT50M60L2VRG Datasheet (PDF)
apt50m60l2vrg.pdf
APT50M60L2VR500V 77A 0.060 POWER MOS V MOSFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package
apt50m60l2vr.pdf
APT50M60L2VR500V 77A 0.060WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD
apt50m60l2vfr.pdf
APT50M60L2VFR500V 77A 0.060WPOWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Faster Switching D
apt50m60l2vfrg.pdf
APT50M60L2VFR500V 77A 0.060 POWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D TO-264 MAX Packa
Otros transistores... APT5030BN , APT5040KFLLG , APT50M50JLL , APT50M50L2FLLG , APT50M50L2LLG , APT50M60JVFR , APT50M60JVR , APT50M60L2VFRG , IRF740 , APT50M65B2LLG , APT50M65LFLL , APT50M65LLLG , APT50M75B2FLLG , APT50M75B2LLG , APT50M75LFLLG , APT50M75LLLG , APT50M80B2VFRG .
History: RTR020P02FRA | ASDM40N52E-R | AUIRFN8405TR | AP6679GS | CJAC100SN08U | AP9410AGM | AP4526AGH-HF
History: RTR020P02FRA | ASDM40N52E-R | AUIRFN8405TR | AP6679GS | CJAC100SN08U | AP9410AGM | AP4526AGH-HF
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