APT50M60L2VRG PDF and Equivalents Search

 

APT50M60L2VRG Specs and Replacement

Type Designator: APT50M60L2VRG

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 833 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 77 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 560 nC

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 1800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO-264MAX

APT50M60L2VRG substitution

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APT50M60L2VRG datasheet

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 apt50m60l2vrg.pdf pdf_icon

APT50M60L2VRG

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APT50M60L2VRG

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APT50M60L2VRG

APT50M60L2VFR 500V 77A 0.060W POWER MOS V FREDFET TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Faster Switching D ... See More ⇒

 3.2. Size:158K  apt
 apt50m60l2vfrg.pdf pdf_icon

APT50M60L2VRG

APT50M60L2VFR 500V 77A 0.060 POWER MOS V FREDFET TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D TO-264 MAX Packa... See More ⇒

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Detailed specifications: APT5030BN, APT5040KFLLG, APT50M50JLL, APT50M50L2FLLG, APT50M50L2LLG, APT50M60JVFR, APT50M60JVR, APT50M60L2VFRG, IRF740, APT50M65B2LLG, APT50M65LFLL, APT50M65LLLG, APT50M75B2FLLG, APT50M75B2LLG, APT50M75LFLLG, APT50M75LLLG, APT50M80B2VFRG

Keywords - APT50M60L2VRG MOSFET specs

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