APT50M65LLLG Todos los transistores

 

APT50M65LLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT50M65LLLG

Tipo de FET: MOFETS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 694 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 67 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 1390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO-264

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APT50M65LLLG datasheet

 ..1. Size:98K  apt
apt50m65b2llg apt50m65lllg.pdf pdf_icon

APT50M65LLLG

APT50M65B2LL APT50M65LLL 500V 67A 0.065 R B2LL POWER MOS 7 MOSFET T-MaxTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

 5.1. Size:99K  apt
apt50m65lfll.pdf pdf_icon

APT50M65LLLG

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065 R B2FLL POWER MOS 7 FREDFET T-MaxTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L

 5.2. Size:255K  inchange semiconductor
apt50m65lfll.pdf pdf_icon

APT50M65LLLG

isc N-Channel MOSFET Transistor APT50M65LFLL FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 6.1. Size:60K  apt
apt50m65jll.pdf pdf_icon

APT50M65LLLG

APT50M65JLL 500V 60A 0.065 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

Otros transistores... APT50M50L2FLLG , APT50M50L2LLG , APT50M60JVFR , APT50M60JVR , APT50M60L2VFRG , APT50M60L2VRG , APT50M65B2LLG , APT50M65LFLL , IRF540N , APT50M75B2FLLG , APT50M75B2LLG , APT50M75LFLLG , APT50M75LLLG , APT50M80B2VFRG , APT50M80B2VRG , APT50M80LVFRG , APT50M80LVRG .

History: ME6980ED | 2SK3650-01L

 

 

 


History: ME6980ED | 2SK3650-01L

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