All MOSFET. APT50M65LLLG Datasheet

 

APT50M65LLLG Datasheet and Replacement


   Type Designator: APT50M65LLLG
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 694 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 67 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 1390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO-264
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APT50M65LLLG Datasheet (PDF)

 ..1. Size:98K  apt
apt50m65b2llg apt50m65lllg.pdf pdf_icon

APT50M65LLLG

APT50M65B2LLAPT50M65LLL500V 67A 0.065RB2LL POWER MOS 7 MOSFETT-MaxTMPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

 5.1. Size:99K  apt
apt50m65lfll.pdf pdf_icon

APT50M65LLLG

APT50M65B2FLLAPT50M65LFLL500V 67A 0.065RB2FLL POWER MOS 7 FREDFETT-MaxTMPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesL

 5.2. Size:255K  inchange semiconductor
apt50m65lfll.pdf pdf_icon

APT50M65LLLG

isc N-Channel MOSFET Transistor APT50M65LFLLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 6.1. Size:60K  apt
apt50m65jll.pdf pdf_icon

APT50M65LLLG

APT50M65JLL500V 60A 0.065 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

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History: SWYS069R10VS | BUK9213-30A | SI4670DY | KTJ6164S | IRF820A | SM4021NAKP | AP73T02GH-HF

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