APT50M85B2VFRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50M85B2VFRG
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 1290 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de APT50M85B2VFRG MOSFET
- Selecciónⓘ de transistores por parámetros
APT50M85B2VFRG datasheet
apt50m85b2vfrg apt50m85lvfrg.pdf
APT50M85B2VFR APT50M85LVFR 500V 56A 0.085 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout
apt50m85b2vfr.pdf
APT50M85B2VFR APT50M85LVFR 500V 56A 0.085W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical
apt50m85b2vr.pdf
APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio
apt50m85jvr.pdf
APT50M85JVR 500V 50A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche
Otros transistores... APT50M75B2FLLG , APT50M75B2LLG , APT50M75LFLLG , APT50M75LLLG , APT50M80B2VFRG , APT50M80B2VRG , APT50M80LVFRG , APT50M80LVRG , IRF640N , APT50M85LVFRG , APT50M85LVR , APT50N60JCCU2 , APT51F50J , APT51M50J , APT53F80J , APT53N60BC6 , APT53N60SC6 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
bc516 | 2n3391 equivalent | a562 transistor | oc44 datasheet | 2sa70 | 2sa706 | 2sc539 | 2n5401 transistor equivalent