APT50M85B2VFRG Todos los transistores

 

APT50M85B2VFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT50M85B2VFRG
   Tipo de FET: MOFETS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TO-247
 

 Búsqueda de reemplazo de APT50M85B2VFRG MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT50M85B2VFRG Datasheet (PDF)

 ..1. Size:137K  apt
 apt50m85b2vfrg apt50m85lvfrg.pdf pdf_icon

APT50M85B2VFRG

APT50M85B2VFRAPT50M85LVFR500V 56A 0.085B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

 1.1. Size:39K  apt
 apt50m85b2vfr.pdf pdf_icon

APT50M85B2VFRG

APT50M85B2VFRAPT50M85LVFR500V 56A 0.085WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 3.1. Size:36K  apt
 apt50m85b2vr.pdf pdf_icon

APT50M85B2VFRG

APT50M85B2VRAPT50M85LVR500V 56A 0.085WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

 6.1. Size:74K  apt
 apt50m85jvr.pdf pdf_icon

APT50M85B2VFRG

APT50M85JVR500V 50A 0.085POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

MOSTRAR MÁS

Otros transistores... APT50M75B2FLLG , APT50M75B2LLG , APT50M75LFLLG , APT50M75LLLG , APT50M80B2VFRG , APT50M80B2VRG , APT50M80LVFRG , APT50M80LVRG , IRF640N , APT50M85LVFRG , APT50M85LVR , APT50N60JCCU2 , APT51F50J , APT51M50J , APT53F80J , APT53N60BC6 , APT53N60SC6 .

 

 
Back to Top

 


 
.