APT50M85B2VFRG - описание и поиск аналогов

 

APT50M85B2VFRG - Аналоги. Основные параметры


   Наименование производителя: APT50M85B2VFRG
   Тип транзистора: MOFETS
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 1290 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для APT50M85B2VFRG

   - подбор ⓘ MOSFET транзистора по параметрам

 

APT50M85B2VFRG технические параметры

 ..1. Size:137K  apt
 apt50m85b2vfrg apt50m85lvfrg.pdf pdf_icon

APT50M85B2VFRG

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout

 1.1. Size:39K  apt
 apt50m85b2vfr.pdf pdf_icon

APT50M85B2VFRG

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

 3.1. Size:36K  apt
 apt50m85b2vr.pdf pdf_icon

APT50M85B2VFRG

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio

 6.1. Size:74K  apt
 apt50m85jvr.pdf pdf_icon

APT50M85B2VFRG

APT50M85JVR 500V 50A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

ПОКАЗАТЬ ЕЩЁ

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