APT53F80J Todos los transistores

 

APT53F80J MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT53F80J

Tipo de FET: MOFETS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 960 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 145 nS

Cossⓘ - Capacitancia de salida: 1745 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: SOT-227

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APT53F80J datasheet

 ..1. Size:210K  microsemi
apt53f80j.pdf pdf_icon

APT53F80J

APT53F80J 800V, 57A, 0.11 Max, trr 470ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high

 9.1. Size:149K  microsemi
apt53n60bc6 apt53n60sc6.pdf pdf_icon

APT53F80J

APT53N60BC6 APT53N60SC6 600V 53A 0.070 COOLMOS Power Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated D Popular TO-247 or Surface Mount D3 package. G S MAXIMUM RATINGS All Ratings per die TC = 25 C unless otherwise specified. Symbol Parame

 9.2. Size:376K  inchange semiconductor
apt53n60bc6.pdf pdf_icon

APT53F80J

isc N-Channel MOSFET Transistor APT53N60BC6 FEATURES Drain Current I =53A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.07 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

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