APT53F80J Datasheet. Specs and Replacement
Type Designator: APT53F80J 📄📄
Type of Transistor: MOFETS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 960 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 1745 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT-227
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APT53F80J substitution
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APT53F80J datasheet
apt53f80j.pdf
APT53F80J 800V, 57A, 0.11 Max, trr 470ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high... See More ⇒
apt53n60bc6 apt53n60sc6.pdf
APT53N60BC6 APT53N60SC6 600V 53A 0.070 COOLMOS Power Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated D Popular TO-247 or Surface Mount D3 package. G S MAXIMUM RATINGS All Ratings per die TC = 25 C unless otherwise specified. Symbol Parame... See More ⇒
apt53n60bc6.pdf
isc N-Channel MOSFET Transistor APT53N60BC6 FEATURES Drain Current I =53A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.07 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: APT50M80LVFRG, APT50M80LVRG, APT50M85B2VFRG, APT50M85LVFRG, APT50M85LVR, APT50N60JCCU2, APT51F50J, APT51M50J, 10N60, APT53N60BC6, APT53N60SC6, APT5570AN, APT56F50B2, APT56F50L, APT56F60B2, APT56F60L, APT56M50B2
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