APT56F50L Todos los transistores

 ..1. Size:212K  microsemi
 apt56f50b2 apt56f50l.pdf

APT56F50B2 APT56F50L 500V, 56A, 0.10 Max, trr 280ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap

 ..2. Size:255K  inchange semiconductor
 apt56f50l.pdf

isc N-Channel MOSFET Transistor APT56F50L FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 6.1. Size:375K  inchange semiconductor
 apt56f50b2.pdf

isc N-Channel MOSFET Transistor APT56F50B2 FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.1. Size:124K  microsemi
 apt56f60b2 apt56f60l.pdf

APT56F60B2 APT56F60L 600V, 60A, 0.11 Max, trr 290ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap

 8.2. Size:255K  inchange semiconductor
 apt56f60l.pdf

isc N-Channel MOSFET Transistor APT56F60L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.11 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.3. Size:375K  inchange semiconductor
 apt56f60b2.pdf

isc N-Channel MOSFET Transistor APT56F60B2 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.11 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp