APT56F50L - Даташиты. Аналоги. Основные параметры
Наименование производителя: APT56F50L
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 780 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 945 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO-264
Аналог (замена) для APT56F50L
APT56F50L Datasheet (PDF)
apt56f50b2 apt56f50l.pdf
APT56F50B2 APT56F50L 500V, 56A, 0.10 Max, trr 280nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
apt56f50l.pdf
isc N-Channel MOSFET Transistor APT56F50LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
apt56f50b2.pdf
isc N-Channel MOSFET Transistor APT56F50B2FEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt56f60b2 apt56f60l.pdf
APT56F60B2 APT56F60L 600V, 60A, 0.11 Max, trr 290nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
Другие MOSFET... APT50N60JCCU2 , APT51F50J , APT51M50J , APT53F80J , APT53N60BC6 , APT53N60SC6 , APT5570AN , APT56F50B2 , 7N65 , APT56F60B2 , APT56F60L , APT56M50B2 , APT56M50L , APT56M60B2 , APT56M60L , APT58F50J , APT58M50J .
History: R6002END | YJP150N06AQ | ME9435-G | JCS10N60CT | ME66N04T | FQD19N10L | MSK30P02DF
History: R6002END | YJP150N06AQ | ME9435-G | JCS10N60CT | ME66N04T | FQD19N10L | MSK30P02DF
Список транзисторов
Обновления
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