APT58M50JCU3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT58M50JCU3  📄📄 

Tipo de FET: MOFETS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 543 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 58 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 1164 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: SOT-227

  📄📄 Copiar 

 Búsqueda de reemplazo de APT58M50JCU3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT58M50JCU3 datasheet

 ..1. Size:108K  microsemi
 apt58m50jcu3.pdf pdf_icon

APT58M50JCU3

APT58M50JCU3 VDSS = 500V ISOTOP Buck chopper RDSon = 65m Max @ Tj = 25 C MOSFET + SiC chopper diode ID = 58A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schottky D

 3.1. Size:108K  microsemi
 apt58m50jcu2.pdf pdf_icon

APT58M50JCU3

APT58M50JCU2 VDSS = 500V ISOTOP Boost chopper RDSon = 65m Max @ Tj = 25 C MOSFET + SiC chopper diode ID = 58A @ Tc = 25 C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gate ch

 5.1. Size:119K  microsemi
 apt58m50j.pdf pdf_icon

APT58M50JCU3

APT58M50J 500V, 58A, 0.065 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon g

 8.1. Size:209K  microsemi
 apt58m80j.pdf pdf_icon

APT58M50JCU3

APT58M80J 800V, 60A, 0.10 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

MOSTRAR MÁS

Otros transistores... APT56F60L, APT56M50B2, APT56M50L, APT56M60B2, APT56M60L, APT58F50J, APT58M50J, APT58M50JCU2, 2SK3878, APT58M80J, APT5F100K, APT6010B2FLLG, APT6010B2LLG, APT6010LFLLG, APT6010LLLG, APT6011B2VFRG, APT6011LVFRG