APT58M50JCU3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT58M50JCU3
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 543 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 58 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 1164 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: SOT-227
Búsqueda de reemplazo de APT58M50JCU3 MOSFET
APT58M50JCU3 Datasheet (PDF)
apt58m50jcu3.pdf

APT58M50JCU3VDSS = 500V ISOTOP Buck chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schottky D
apt58m50jcu2.pdf

APT58M50JCU2VDSS = 500V ISOTOP Boost chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gate ch
apt58m50j.pdf

APT58M50J 500V, 58A, 0.065 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon g
apt58m80j.pdf

APT58M80J 800V, 60A, 0.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga
Otros transistores... APT56F60L , APT56M50B2 , APT56M50L , APT56M60B2 , APT56M60L , APT58F50J , APT58M50J , APT58M50JCU2 , IRLB4132 , APT58M80J , APT5F100K , APT6010B2FLLG , APT6010B2LLG , APT6010LFLLG , APT6010LLLG , APT6011B2VFRG , APT6011LVFRG .
History: SSM3J16FU | TSM802CQ | SFG150N10KF | TPA65R190MFD | AOD7S65 | SQM120N02-1M3L | 2SK2849L
History: SSM3J16FU | TSM802CQ | SFG150N10KF | TPA65R190MFD | AOD7S65 | SQM120N02-1M3L | 2SK2849L



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