APT58M50JCU3 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT58M50JCU3
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 543 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 1164 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: SOT-227
Аналог (замена) для APT58M50JCU3
APT58M50JCU3 Datasheet (PDF)
apt58m50jcu3.pdf

APT58M50JCU3VDSS = 500V ISOTOP Buck chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schottky D
apt58m50jcu2.pdf

APT58M50JCU2VDSS = 500V ISOTOP Boost chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gate ch
apt58m50j.pdf

APT58M50J 500V, 58A, 0.065 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon g
apt58m80j.pdf

APT58M80J 800V, 60A, 0.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga
Другие MOSFET... APT56F60L , APT56M50B2 , APT56M50L , APT56M60B2 , APT56M60L , APT58F50J , APT58M50J , APT58M50JCU2 , 5N60 , APT58M80J , APT5F100K , APT6010B2FLLG , APT6010B2LLG , APT6010LFLLG , APT6010LLLG , APT6011B2VFRG , APT6011LVFRG .
History: LP3443LT1G | VS4802GPHT | IXTT30N50L | TPCL4202 | SM4818 | IRF3710ZS | P2503HEA
History: LP3443LT1G | VS4802GPHT | IXTT30N50L | TPCL4202 | SM4818 | IRF3710ZS | P2503HEA



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