APT58M80J Todos los transistores

 

APT58M80J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT58M80J
   Tipo de FET: MOFETS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 960 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 570 nC
   trⓘ - Tiempo de subida: 145 nS
   Cossⓘ - Capacitancia de salida: 1745 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT-227
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APT58M80J Datasheet (PDF)

 ..1. Size:209K  microsemi
 apt58m80j.pdf pdf_icon

APT58M80J

APT58M80J 800V, 60A, 0.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

 8.1. Size:119K  microsemi
 apt58m50j.pdf pdf_icon

APT58M80J

APT58M50J 500V, 58A, 0.065 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon g

 8.2. Size:108K  microsemi
 apt58m50jcu3.pdf pdf_icon

APT58M80J

APT58M50JCU3VDSS = 500V ISOTOP Buck chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schottky D

 8.3. Size:108K  microsemi
 apt58m50jcu2.pdf pdf_icon

APT58M80J

APT58M50JCU2VDSS = 500V ISOTOP Boost chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gate ch

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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