APT6015B2VFRG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6015B2VFRG 📄📄
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 520 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 900 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: TO-247
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APT6015B2VFRG datasheet
apt6015b2vfrg apt6015lvfrg.pdf
APT6015B2VFR APT6015LVFR 600V 38A 0.150 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
apt6015b2vfr.pdf
isc N-Channel MOSFET Transistor APT6015B2VFR FEATURES Drain Current I = 38A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu
apt6015b2vr.pdf
APT6015B2VR 600V 38A 0.150 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
apt6015lvfr.pdf
APT6015LVFR 600V 38A 0.150W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste
Otros transistores... APT6010LFLLG, APT6010LLLG, APT6011B2VFRG, APT6011LVFRG, APT6013B2FLLG, APT6013B2LLG, APT6013LFLLG, APT6013LLLG, AON7506, APT6015JVFR, APT6015LVFRG, APT6017B2FLLG, APT6017B2LLG, APT6017LFLLG, APT6017LLLG, APT6018JN, APT6021BFLLG
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SI7489DP | APT6035BVFRG | SI7469DP | G2502 | MTP5N05 | SI7328DN | FS70UM-06
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