All MOSFET. APT6015B2VFRG Datasheet

 

APT6015B2VFRG Datasheet and Replacement


   Type Designator: APT6015B2VFRG
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-247
 

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APT6015B2VFRG Datasheet (PDF)

 ..1. Size:113K  apt
apt6015b2vfrg apt6015lvfrg.pdf pdf_icon

APT6015B2VFRG

APT6015B2VFRAPT6015LVFR600V 38A 0.150B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 2.1. Size:376K  inchange semiconductor
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APT6015B2VFRG

isc N-Channel MOSFET Transistor APT6015B2VFRFEATURESDrain Current I = 38A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 4.1. Size:60K  apt
apt6015b2vr.pdf pdf_icon

APT6015B2VFRG

APT6015B2VR600V 38A 0.150POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 7.1. Size:59K  apt
apt6015lvfr.pdf pdf_icon

APT6015B2VFRG

APT6015LVFR600V 38A 0.150WPOWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste

Datasheet: APT6010LFLLG , APT6010LLLG , APT6011B2VFRG , APT6011LVFRG , APT6013B2FLLG , APT6013B2LLG , APT6013LFLLG , APT6013LLLG , AON7506 , APT6015JVFR , APT6015LVFRG , APT6017B2FLLG , APT6017B2LLG , APT6017LFLLG , APT6017LLLG , APT6018JN , APT6021BFLLG .

History: STF21N65M5 | MTP3401N3

Keywords - APT6015B2VFRG MOSFET datasheet

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