APT6018JN Datasheet. Equivalente

 ..1. Size:55K  apt
 apt6018jn.pdf

D G APT6015JN 600V 38.0A 0.15 S APT6018JN 600V 35.0A 0.18 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6015JN 6018JN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Cu

 8.1. Size:69K  apt
 apt6017b2ll.pdf

APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

 8.2. Size:147K  apt
 apt6011b2vfrg apt6011lvfrg.pdf

APT6011B2VFR APT6011LVFR 600V 49A 0.110 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 8.3. Size:70K  apt
 apt6013b2fll.pdf

APT6013B2FLL APT6013LFLL 600V 43A 0.130W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

 8.4. Size:59K  apt
 apt6015lvfr.pdf

APT6015LVFR 600V 38A 0.150W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste

 8.5. Size:60K  apt
 apt6015b2vr.pdf

APT6015B2VR 600V 38A 0.150 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 8.6. Size:162K  apt
 apt6017b2fllg apt6017lfllg.pdf

APT6017B2FLL APT6017LFLL 600V 35A 0.170 B2FLL R POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L

 8.7. Size:37K  apt
 apt6011lvr.pdf

APT6011B2VR APT6011LVR 600V 49A 0.110W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifications

 8.8. Size:143K  apt
 apt6011b2vr.pdf

APT6011B2VR APT6011LVR 600V 49A 0.110 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR

 8.9. Size:71K  apt
 apt6013jvr.pdf

APT6013JVR 600V 40A 0.130 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalanch

 8.10. Size:69K  apt
 apt6013b2ll.pdf

APT6013B2LL APT6013LLL 600V 43A 0.130W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

 8.11. Size:200K  apt
 apt6013b2llg apt6013lllg.pdf

APT6013B2LL APT6013LLL 600V 43A 0.130 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

 8.12. Size:70K  apt
 apt6015jvr.pdf

APT6015JVR 600V 35A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

 8.13. Size:60K  apt
 apt6017wvr.pdf

APT6017WVR 600V 31.5A 0.170 POWER MOS V TO-267 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 8.14. Size:62K  apt
 apt6015lvr.pdf

APT6015LVR 600V 38A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. D Faster Switching 100% Avalanche Tested Lowe

 8.15. Size:70K  apt
 apt6013jfll.pdf

APT6013JFLL 600V 39A 0.130W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

 8.16. Size:69K  apt
 apt6010b2ll.pdf

APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

 8.17. Size:33K  apt
 apt6011b2vfr.pdf

APT6011B2VFR 600V 49A 0.110W POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

 8.18. Size:69K  apt
 apt6013jll.pdf

APT6013JLL 600V 39A 0.130W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

 8.19. Size:161K  apt
 apt6017b2llg apt6017lllg.pdf

APT6017B2LL APT6017LLL 600V 35A 0.170 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along

 8.20. Size:70K  apt
 apt6010jfll.pdf

APT6010JFLL 600V 47A 0.100W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

 8.21. Size:62K  apt
 apt6015jn.pdf

D G APT6015JN 600V 38.0A 0.15 S APT6018JN 600V 35.0A 0.18 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6015JN 6018JN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Cu

 8.22. Size:142K  apt
 apt6013b2fllg apt6013lfllg.pdf

APT6013B2FLL APT6013LFLL 600V 43A 0.130 B2FLL R POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L

 8.23. Size:60K  apt
 apt6015.pdf

APT6015B2VR 600V 38A 0.150 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 8.24. Size:33K  apt
 apt6011lvfr.pdf

APT6011LVFR 600V 49A 0.110W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste

 8.25. Size:69K  apt
 apt6010jll.pdf

APT6010JLL 600V 47A 0.100W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

 8.26. Size:113K  apt
 apt6015b2vfrg apt6015lvfrg.pdf

APT6015B2VFR APT6015LVFR 600V 38A 0.150 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 8.27. Size:70K  apt
 apt6017jfll.pdf

APT6017JFLL 600V 31A 0.170W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

 8.28. Size:70K  apt
 apt6017b2fll.pdf

APT6017B2FLL APT6017LFLL 600V 35A 0.017W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

 8.29. Size:69K  apt
 apt6017jll.pdf

APT6017JLL 600V 31A 0.170W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

 8.30. Size:136K  microsemi
 apt6015jvfr.pdf

APT6015JVFR 600V 35A 0.150W FREDFET POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhance- ment mode power MOSFETs. This new technology minimizes the JFET ef- fect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP file # E145592 Faster S

 8.31. Size:259K  microsemi
 apt6010b2fllg apt6010lfllg.pdf

600V 54A 0.100 APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2FLL POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering

 8.32. Size:258K  microsemi
 apt6010b2llg apt6010lllg.pdf

600V 54A 0.100 APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(O

 8.33. Size:376K  inchange semiconductor
 apt6013b2fll.pdf

isc N-Channel MOSFET Transistor APT6013B2FLL FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 8.34. Size:255K  inchange semiconductor
 apt6015lvfr.pdf

isc N-Channel MOSFET Transistor APT6015LVFR FEATURES Drain Current I = 38A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.35. Size:255K  inchange semiconductor
 apt6017lfll.pdf

isc N-Channel MOSFET Transistor APT6017LFLL FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.36. Size:376K  inchange semiconductor
 apt6010b2fll.pdf

isc N-Channel MOSFET Transistor APT6010B2FLL FEATURES Drain Current I = 54A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.37. Size:255K  inchange semiconductor
 apt6010lfll.pdf

isc N-Channel MOSFET Transistor APT6010LFLL FEATURES Drain Current I = 54A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 8.38. Size:376K  inchange semiconductor
 apt6013b2ll.pdf

isc N-Channel MOSFET Transistor APT6013B2LL FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.39. Size:376K  inchange semiconductor
 apt6015b2vfr.pdf

isc N-Channel MOSFET Transistor APT6015B2VFR FEATURES Drain Current I = 38A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 8.40. Size:376K  inchange semiconductor
 apt6010b2ll.pdf

isc N-Channel MOSFET Transistor APT6010B2LL FEATURES Drain Current I = 54A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 8.41. Size:255K  inchange semiconductor
 apt6013lfll.pdf

isc N-Channel MOSFET Transistor APT6013LFLL FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.42. Size:376K  inchange semiconductor
 apt6017b2fll.pdf

isc N-Channel MOSFET Transistor APT6017B2FLL FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu