APT6025SFLLG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6025SFLLG  📄📄 

Tipo de FET: MOFETS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 325 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 535 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: D3PAK

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APT6025SFLLG datasheet

 ..1. Size:162K  apt
 apt6025bfllg apt6025sfllg.pdf pdf_icon

APT6025SFLLG

APT6025BFLL APT6025SFLL 600V 24A 0.250 BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL

 6.1. Size:116K  apt
 apt6025bvfrg apt6025svfrg.pdf pdf_icon

APT6025SFLLG

APT6025BVFR APT6025SVFR 600V 25A 0.250 POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Re

 6.2. Size:113K  apt
 apt6025svfr.pdf pdf_icon

APT6025SFLLG

APT6025BVFR APT6025SVFR 600V 25A 0.250 POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Re

 6.3. Size:59K  apt
 apt6025svr.pdf pdf_icon

APT6025SFLLG

APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower Le

MOSTRAR MÁS

Otros transistores... APT6018JN, APT6021BFLLG, APT6021BLLG, APT6021SFLLG, APT6025BFLLG, APT6025BLLG, APT6025BVFRG, APT6025BVRG, IRF2807, APT6025SVFRG, APT6029BFLLG, APT6029SFLLG, APT6029SLL, APT6029SLLG, APT6033BN, APT6035BVFRG, APT6035SVFRG