APT6025SFLLG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT6025SFLLG
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 325 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 535 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
Тип корпуса: D3PAK
Аналог (замена) для APT6025SFLLG
APT6025SFLLG Datasheet (PDF)
apt6025bfllg apt6025sfllg.pdf

APT6025BFLLAPT6025SFLL600V 24A 0.250BFLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL
apt6025bvfrg apt6025svfrg.pdf

APT6025BVFRAPT6025SVFR600V 25A 0.250POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Re
apt6025svfr.pdf

APT6025BVFRAPT6025SVFR600V 25A 0.250POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Re
apt6025svr.pdf

APT6025SVR600V 25A 0.250WPOWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower Le
Другие MOSFET... APT6018JN , APT6021BFLLG , APT6021BLLG , APT6021SFLLG , APT6025BFLLG , APT6025BLLG , APT6025BVFRG , APT6025BVRG , STP80NF70 , APT6025SVFRG , APT6029BFLLG , APT6029SFLLG , APT6029SLL , APT6029SLLG , APT6033BN , APT6035BVFRG , APT6035SVFRG .
History: AOTF600A70L | SIHFBC40AS | 22N10 | SM4286T9RL | RP1E090RPTR | AP6982GM-HF | AON3702
History: AOTF600A70L | SIHFBC40AS | 22N10 | SM4286T9RL | RP1E090RPTR | AP6982GM-HF | AON3702



Список транзисторов
Обновления
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
ac128 datasheet | 2n5496 | 2sb600 | 2sa1209 | 2sc1364 replacement | 2sd665 | 7506 mosfet datasheet | 2sb1186a