APT6040SVFR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6040SVFR  📄📄 

Tipo de FET: MOFETS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 305 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: D3PAK

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APT6040SVFR datasheet

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APT6040SVFR

600V 16A 0.40 APT6040BVFR APT6040SVFR APT6040BVFRG*APT6040SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS

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APT6040SVFR

APT6040BVR APT6040SVR 600V 16A 0.400 BVR POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVR also achieves faster switching speeds through optimized gate layout. D Fast

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 apt6040bn.pdf pdf_icon

APT6040SVFR

D TO-247 G APT6040BN 600V 18.0A 0.40 S APT6045BN 600V 17.0A 0.45 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25 C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V

 7.2. Size:113K  apt
 apt6040bvfr.pdf pdf_icon

APT6040SVFR

APT6040BVFR APT6040SVFR 600V 16A 0.400 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR

MOSTRAR MÁS

Otros transistores... APT6029SLLG, APT6033BN, APT6035BVFRG, APT6035SVFRG, APT6038BFLLG, APT6038BLLG, APT6038SFLLG, APT6038SLLG, MMIS60R580P, APT6040SVR, APT6045BN, APT6045BVFRG, APT6045SVFRG, APT6060AN, APT6070AN, APT60M75JVFR, APT60M75L2FLLG