APT6040SVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6040SVFR
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 305 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: D3PAK
Búsqueda de reemplazo de APT6040SVFR MOSFET
APT6040SVFR Datasheet (PDF)
apt6040svfr.pdf

600V 16A 0.40APT6040BVFR APT6040SVFRAPT6040BVFRG*APT6040SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS
apt6040svr.pdf

APT6040BVRAPT6040SVR600V 16A 0.400BVRPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVRalso achieves faster switching speeds through optimized gate layout.D Fast
apt6040bn.pdf

DTO-247GAPT6040BN 600V 18.0A 0.40SAPT6045BN 600V 17.0A 0.45POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 6040BN 6045BN UNITVDSS Drain-Source Voltage600 600 VoltsID Continuous Drain Current @ TC = 25C18 17AmpsIDM Pulsed Drain Current 172 68V
apt6040bvfr.pdf

APT6040BVFRAPT6040SVFR600V 16A 0.400BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SVFR
Otros transistores... APT6029SLLG , APT6033BN , APT6035BVFRG , APT6035SVFRG , APT6038BFLLG , APT6038BLLG , APT6038SFLLG , APT6038SLLG , AO3401 , APT6040SVR , APT6045BN , APT6045BVFRG , APT6045SVFRG , APT6060AN , APT6070AN , APT60M75JVFR , APT60M75L2FLLG .
History: TSD5N65M | AOI296A | AP6901AGSM-HF | IRFH8307 | AP18P10GI | P0780ATFS
History: TSD5N65M | AOI296A | AP6901AGSM-HF | IRFH8307 | AP18P10GI | P0780ATFS



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