APT6040SVFR Datasheet. Specs and Replacement

Type Designator: APT6040SVFR  📄📄 

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: D3PAK

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APT6040SVFR datasheet

 ..1. Size:106K  apt
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APT6040SVFR

600V 16A 0.40 APT6040BVFR APT6040SVFR APT6040BVFRG*APT6040SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS ... See More ⇒

 5.1. Size:58K  apt
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APT6040SVFR

APT6040BVR APT6040SVR 600V 16A 0.400 BVR POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVR also achieves faster switching speeds through optimized gate layout. D Fast... See More ⇒

 7.1. Size:50K  apt
apt6040bn.pdf pdf_icon

APT6040SVFR

D TO-247 G APT6040BN 600V 18.0A 0.40 S APT6045BN 600V 17.0A 0.45 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25 C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V... See More ⇒

 7.2. Size:113K  apt
apt6040bvfr.pdf pdf_icon

APT6040SVFR

APT6040BVFR APT6040SVFR 600V 16A 0.400 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR... See More ⇒

Detailed specifications: APT6029SLLG, APT6033BN, APT6035BVFRG, APT6035SVFRG, APT6038BFLLG, APT6038BLLG, APT6038SFLLG, APT6038SLLG, MMIS60R580P, APT6040SVR, APT6045BN, APT6045BVFRG, APT6045SVFRG, APT6060AN, APT6070AN, APT60M75JVFR, APT60M75L2FLLG

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