APT7F120B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT7F120B 📄📄
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 335 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Encapsulados: TO-247
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APT7F120B datasheet
apt7f120b apt7f120s.pdf
APT7F120B APT7F120S 1200V, 7A, 2.4 Max, trr 190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low
apt7f100b apt7f100s.pdf
APT7F100B APT7F100S 1000V, 7A, 2.0 Max N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAK MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti- mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge,
apt7f80k.pdf
APT7F80K 800V, 7A, 1.50 MAX,TRR 160nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high g
Otros transistores... APT75F50B2, APT75F50L, APT75M50B2, APT75M50L, APT77N60BC6, APT77N60SC6, APT7F100B, APT7F100S, IRF540N, APT7F120S, APT7F80K, APT7M120B, APT7M120S, APT8014L2FLLG, APT8018L2VFRG, APT8020B2FLLG, APT8020B2LLG
Parámetros del MOSFET. Cómo se afectan entre sí.
History: AP3N1R8MT-L | IXFH12N90P
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