APT7F120B datasheet, аналоги, основные параметры

Наименование производителя: APT7F120B  📄📄 

Тип транзистора: MOFETS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 335 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 190 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm

Тип корпуса: TO-247

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Аналог (замена) для APT7F120B

- подборⓘ MOSFET транзистора по параметрам

 

APT7F120B даташит

 ..1. Size:238K  microsemi
 apt7f120b apt7f120s.pdf pdf_icon

APT7F120B

APT7F120B APT7F120S 1200V, 7A, 2.4 Max, trr 190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

 8.1. Size:382K  microsemi
 apt7f100b apt7f100s.pdf pdf_icon

APT7F120B

APT7F100B APT7F100S 1000V, 7A, 2.0 Max N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAK MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti- mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge,

 9.1. Size:211K  microsemi
 apt7f80k.pdf pdf_icon

APT7F120B

APT7F80K 800V, 7A, 1.50 MAX,TRR 160nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high g

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