RFD15N06LE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFD15N06LE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 72 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: TO251AA
Búsqueda de reemplazo de RFD15N06LE MOSFET
RFD15N06LE Datasheet (PDF)
rfd15n06le-sm.pdf

RFD15N06LE, RFD15N06LESMData Sheet April 1999 File Number 4079.115A, 60V, 0.065 Ohm, ESD Rated, Logic FeaturesLevel, N-Channel Power MOSFETs 15A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.065the MegaFET process. This process, which uses feature 2kV ESD Protectedsizes approaching those of LSI circuits, gives optimumutilization of silicon,
rfd15p05-sm rfp15p05.pdf

RFD15P05, RFD15P05SM, RFP15P05Data Sheet July 1999 File Number 2387.515A, 50V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 50VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio
rfd15p06-sm rfp15p06.pdf

RFD15P06, RFD15P06SM, RFP15P06Data Sheet July 1999 File Number 3988.315A, 60V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 60VThese P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio
rfd15p05.pdf

RFD15P05www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.066 at VGS = - 10 V - 20APPLICATIONS- 60 40 nC at VGS = - 4.5 V - 180.080 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par
Otros transistores... RFD12N06RLE , RFD12N06RLESM , RFD14N05 , RFD14N05L , RFD14N05LSM , RFD14N05SM , RFD14N06L , RFD14N06LSM , MMD60R360PRH , RFD15N06LESM , RFD15P05 , RFD15P06 , RFD15P06SM , RFD16N03L , RFD16N03LSM , RFD16N05 , RFD16N05L .
History: IPI26CN10NG | IPD90N04S4-03 | SUB40N06-25L | WML20N50D1 | D1096 | MTA090P02J3 | TK60A08J1
History: IPI26CN10NG | IPD90N04S4-03 | SUB40N06-25L | WML20N50D1 | D1096 | MTA090P02J3 | TK60A08J1



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