All MOSFET. RFD15N06LE Datasheet

 

RFD15N06LE MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFD15N06LE
   Marking Code: F15N6L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO251AA

 RFD15N06LE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFD15N06LE Datasheet (PDF)

 0.1. Size:103K  intersil
 rfd15n06le-sm.pdf

RFD15N06LE RFD15N06LE

RFD15N06LE, RFD15N06LESMData Sheet April 1999 File Number 4079.115A, 60V, 0.065 Ohm, ESD Rated, Logic FeaturesLevel, N-Channel Power MOSFETs 15A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.065the MegaFET process. This process, which uses feature 2kV ESD Protectedsizes approaching those of LSI circuits, gives optimumutilization of silicon,

 9.1. Size:87K  intersil
 rfd15p05-sm rfp15p05.pdf

RFD15N06LE RFD15N06LE

RFD15P05, RFD15P05SM, RFP15P05Data Sheet July 1999 File Number 2387.515A, 50V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 50VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio

 9.2. Size:87K  intersil
 rfd15p06-sm rfp15p06.pdf

RFD15N06LE RFD15N06LE

RFD15P06, RFD15P06SM, RFP15P06Data Sheet July 1999 File Number 3988.315A, 60V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 60VThese P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio

 9.3. Size:805K  cn vbsemi
 rfd15p05.pdf

RFD15N06LE RFD15N06LE

RFD15P05www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.066 at VGS = - 10 V - 20APPLICATIONS- 60 40 nC at VGS = - 4.5 V - 180.080 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par

 9.4. Size:828K  cn vbsemi
 rfd15p05sm.pdf

RFD15N06LE RFD15N06LE

RFD15P05SMwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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