RFD15N06LE Specs and Replacement

Type Designator: RFD15N06LE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO251AA

RFD15N06LE substitution

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RFD15N06LE datasheet

 0.1. Size:103K  intersil
 rfd15n06le-sm.pdf pdf_icon

RFD15N06LE

RFD15N06LE, RFD15N06LESM Data Sheet April 1999 File Number 4079.1 15A, 60V, 0.065 Ohm, ESD Rated, Logic Features Level, N-Channel Power MOSFETs 15A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI circuits, gives optimum utilization of silicon,... See More ⇒

 9.1. Size:87K  intersil
 rfd15p05-sm rfp15p05.pdf pdf_icon

RFD15N06LE

RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 File Number 2387.5 15A, 50V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 50V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio... See More ⇒

 9.2. Size:87K  intersil
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RFD15N06LE

RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 File Number 3988.3 15A, 60V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 60V These P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio... See More ⇒

 9.3. Size:805K  cn vbsemi
 rfd15p05.pdf pdf_icon

RFD15N06LE

RFD15P05 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par... See More ⇒

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Detailed specifications: RFD12N06RLE, RFD12N06RLESM, RFD14N05, RFD14N05L, RFD14N05LSM, RFD14N05SM, RFD14N06L, RFD14N06LSM, RU7088R, RFD15N06LESM, RFD15P05, RFD15P06, RFD15P06SM, RFD16N03L, RFD16N03LSM, RFD16N05, RFD16N05L

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