APT8075BVFRG Todos los transistores

 

APT8075BVFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT8075BVFRG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 260 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO-247
 

 Búsqueda de reemplazo de APT8075BVFRG MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT8075BVFRG Datasheet (PDF)

 ..1. Size:52K  apt
apt8075bvfrg.pdf pdf_icon

APT8075BVFRG

APT8075BVFR800V 12A 0.750POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 3.1. Size:72K  apt
apt8075bvfr.pdf pdf_icon

APT8075BVFRG

APT8075BVFR800V 12A 0.750POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 5.1. Size:62K  apt
apt8075bvr.pdf pdf_icon

APT8075BVFRG

APT8075BVR800V 12A 0.750POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 5.2. Size:376K  inchange semiconductor
apt8075bvr.pdf pdf_icon

APT8075BVFRG

isc N-Channel MOSFET Transistor APT8075BVRFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Otros transistores... APT8035JN , APT8043BFLLG , APT8043SFLLG , APT8043SLL , APT8052BFLLG , APT8052BLLG , APT8052SFLLG , APT8075AN , K4145 , APT8090AN , APT8090BN , APT80F60J , APT80M60J , APT84F50B2 , APT84F50L , APT84M50B2 , APT84M50L .

History: SVSP11N60DD2TR

 

 
Back to Top

 


 
.