APT84F50B2 Todos los transistores

 

APT84F50B2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT84F50B2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 84 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 340 nC
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 1455 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: TO-247
 

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APT84F50B2 Datasheet (PDF)

 ..1. Size:212K  microsemi
 apt84f50b2 apt84f50l.pdf pdf_icon

APT84F50B2

APT84F50B2 APT84F50L500V, 84A, 0.065 Max, trr 320nsN-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate res

 ..2. Size:376K  inchange semiconductor
 apt84f50b2.pdf pdf_icon

APT84F50B2

isc N-Channel MOSFET Transistor APT84F50B2FEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 6.1. Size:255K  inchange semiconductor
 apt84f50l.pdf pdf_icon

APT84F50B2

isc N-Channel MOSFET Transistor APT84F50LFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:211K  microsemi
 apt84m50b2 apt84m50l.pdf pdf_icon

APT84F50B2

APT84M50B2 APT84M50L 500V, 84A, 0.065 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and ca

MOSTRAR MÁS

Otros transistores... APT8052BLLG , APT8052SFLLG , APT8075AN , APT8075BVFRG , APT8090AN , APT8090BN , APT80F60J , APT80M60J , SPP20N60C3 , APT84F50L , APT84M50B2 , APT84M50L , APT8M100B , APT8M100S , APT8M80K , APT901R1AN , APT901R1BN .

 

 
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