APT84F50B2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT84F50B2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1135 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 84 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 340 nC
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 1455 pF
Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
Paquete / Cubierta: TO-247
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APT84F50B2 Datasheet (PDF)
apt84f50b2 apt84f50l.pdf
APT84F50B2 APT84F50L500V, 84A, 0.065 Max, trr 320nsN-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate res
apt84f50b2.pdf
isc N-Channel MOSFET Transistor APT84F50B2FEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt84f50l.pdf
isc N-Channel MOSFET Transistor APT84F50LFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt84m50b2 apt84m50l.pdf
APT84M50B2 APT84M50L 500V, 84A, 0.065 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and ca
apt84m50l.pdf
isc N-Channel MOSFET Transistor APT84M50LFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt84m50b2.pdf
isc N-Channel MOSFET Transistor APT84M50B2FEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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