APT84F50L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT84F50L 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1135 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 84 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 1455 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Encapsulados: TO-264
📄📄 Copiar
Búsqueda de reemplazo de APT84F50L MOSFET
- Selecciónⓘ de transistores por parámetros
APT84F50L datasheet
apt84f50b2 apt84f50l.pdf
APT84F50B2 APT84F50L 500V, 84A, 0.065 Max, trr 320ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate res
apt84f50l.pdf
isc N-Channel MOSFET Transistor APT84F50L FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt84f50b2.pdf
isc N-Channel MOSFET Transistor APT84F50B2 FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
apt84m50b2 apt84m50l.pdf
APT84M50B2 APT84M50L 500V, 84A, 0.065 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and ca
Otros transistores... APT8052SFLLG, APT8075AN, APT8075BVFRG, APT8090AN, APT8090BN, APT80F60J, APT80M60J, APT84F50B2, 13N50, APT84M50B2, APT84M50L, APT8M100B, APT8M100S, APT8M80K, APT901R1AN, APT901R1BN, APT901R1HN
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SRM6N70 | SRH03P098LMTR-G | JMSH0401ATSQ | R6004KNX | APT8043SFLLG | DH060N08D | APJ10N65P
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D | MSQ30P15 | MSQ30P07D | MSQ100N03D | MSHM60P14 | MSHM40N085 | MSHM30N46
Popular searches
2sc2291 | bc139 | 2sc1398 | 2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent | 2sa640
