APT84F50L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT84F50L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1135 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 84 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 1455 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: TO-264
Búsqueda de reemplazo de APT84F50L MOSFET
APT84F50L PDF Specs
apt84f50b2 apt84f50l.pdf
APT84F50B2 APT84F50L 500V, 84A, 0.065 Max, trr 320ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate res... See More ⇒
apt84f50l.pdf
isc N-Channel MOSFET Transistor APT84F50L FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
apt84f50b2.pdf
isc N-Channel MOSFET Transistor APT84F50B2 FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
apt84m50b2 apt84m50l.pdf
APT84M50B2 APT84M50L 500V, 84A, 0.065 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and ca... See More ⇒
Otros transistores... APT8052SFLLG , APT8075AN , APT8075BVFRG , APT8090AN , APT8090BN , APT80F60J , APT80M60J , APT84F50B2 , IRFP260 , APT84M50B2 , APT84M50L , APT8M100B , APT8M100S , APT8M80K , APT901R1AN , APT901R1BN , APT901R1HN .
History: SSD60N04-12D | 2SK1727
History: SSD60N04-12D | 2SK1727
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