APT84F50L - Аналоги. Основные параметры
Наименование производителя: APT84F50L
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1135 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 84 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 1455 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: TO-264
Аналог (замена) для APT84F50L
APT84F50L технические параметры
apt84f50b2 apt84f50l.pdf
APT84F50B2 APT84F50L 500V, 84A, 0.065 Max, trr 320ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate res
apt84f50l.pdf
isc N-Channel MOSFET Transistor APT84F50L FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt84f50b2.pdf
isc N-Channel MOSFET Transistor APT84F50B2 FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
apt84m50b2 apt84m50l.pdf
APT84M50B2 APT84M50L 500V, 84A, 0.065 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and ca
Другие MOSFET... APT8052SFLLG , APT8075AN , APT8075BVFRG , APT8090AN , APT8090BN , APT80F60J , APT80M60J , APT84F50B2 , IRFP260 , APT84M50B2 , APT84M50L , APT8M100B , APT8M100S , APT8M80K , APT901R1AN , APT901R1BN , APT901R1HN .
History: APT8090AN | SSD60N04-12D | 2SK1727
History: APT8090AN | SSD60N04-12D | 2SK1727
Список транзисторов
Обновления
MOSFET: AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847 | AP4846 | AP4813K | AP4812S | AP4812 | AP40P05 | AP40P04Q | AP40P04K | AP40P04G | AP40N100LK | AP40N100K
Popular searches
2sc2291 | bc139 | 2sc1398 | 2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent | 2sa640



