RFD15P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFD15P06

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO251AA

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RFD15P06 datasheet

 0.1. Size:87K  intersil
 rfd15p06-sm rfp15p06.pdf pdf_icon

RFD15P06

RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 File Number 3988.3 15A, 60V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 60V These P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio

 7.1. Size:87K  intersil
 rfd15p05-sm rfp15p05.pdf pdf_icon

RFD15P06

RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 File Number 2387.5 15A, 50V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 50V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio

 7.2. Size:805K  cn vbsemi
 rfd15p05.pdf pdf_icon

RFD15P06

RFD15P05 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par

 7.3. Size:828K  cn vbsemi
 rfd15p05sm.pdf pdf_icon

RFD15P06

RFD15P05SM www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy

MOSTRAR MÁS

Otros transistores... RFD14N05L, RFD14N05LSM, RFD14N05SM, RFD14N06L, RFD14N06LSM, RFD15N06LE, RFD15N06LESM, RFD15P05, AO4407A, RFD15P06SM, RFD16N03L, RFD16N03LSM, RFD16N05, RFD16N05L, RFD16N05LSM, RFD16N05SM, RFD16N06LE