All MOSFET. RFD15P06 Datasheet

 

RFD15P06 Datasheet and Replacement


   Type Designator: RFD15P06
   Marking Code: F15P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 150(max) nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO251AA
 

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RFD15P06 Datasheet (PDF)

 0.1. Size:87K  intersil
 rfd15p06-sm rfp15p06.pdf pdf_icon

RFD15P06

RFD15P06, RFD15P06SM, RFP15P06Data Sheet July 1999 File Number 3988.315A, 60V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 60VThese P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio

 7.1. Size:87K  intersil
 rfd15p05-sm rfp15p05.pdf pdf_icon

RFD15P06

RFD15P05, RFD15P05SM, RFP15P05Data Sheet July 1999 File Number 2387.515A, 50V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 50VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio

 7.2. Size:805K  cn vbsemi
 rfd15p05.pdf pdf_icon

RFD15P06

RFD15P05www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.066 at VGS = - 10 V - 20APPLICATIONS- 60 40 nC at VGS = - 4.5 V - 180.080 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par

 7.3. Size:828K  cn vbsemi
 rfd15p05sm.pdf pdf_icon

RFD15P06

RFD15P05SMwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

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