APT94N65LC6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT94N65LC6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 833 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 95 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 59 nS
Cossⓘ - Capacitancia de salida: 5451 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Paquete / Cubierta: TO-264
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APT94N65LC6 PDF Specs
apt94n65b2c6 apt94n65lc6.pdf
APT94N65B2C6 APT94N65LC6 650V 94A 0.035 APT94N65B2C6 Super Junction MOSFET T-Max TO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT94N65LC6 Extreme dv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. I... See More ⇒
apt94n65b2c3g.pdf
650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Power Semiconductors Super Junction MOSFET T-MaxTM Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi di... See More ⇒
apt94n60l2c3.pdf
APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg G Avalanche Energy Rated TO-264 Max Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT94N60L2C3 UNIT VDSS Drain-Source Voltage 60... See More ⇒
apt94n60l2c3g.pdf
APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated TO-264 Max Package G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. It... See More ⇒
Otros transistores... APT902RBN , APT904R2AN , APT904R2BN , APT904RAN , APT904RBN , APT94N60L2C3G , APT94N65B2C3G , APT94N65B2C6 , IRFP250 , APT97N65B2C6 , APT97N65LC6 , APT9F100B , APT9F100S , APT9M100B , APT9M100S , APTC60AM18SCG , APTC60AM24SCTG .
History: CJAC10H02
History: CJAC10H02
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