APT94N65LC6
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT94N65LC6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 833
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 95
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 320
nC
trⓘ - Rise Time: 59
nS
Cossⓘ -
Output Capacitance: 5451
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
TO-264
APT94N65LC6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT94N65LC6
Datasheet (PDF)
..1. Size:159K microsemi
apt94n65b2c6 apt94n65lc6.pdf
APT94N65B2C6 APT94N65LC6 650V 94A 0.035APT94N65B2C6Super Junction MOSFET T-MaxTO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT94N65LC6 Extreme dv/dt RatedDGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made withStwo parallel MOSFET die. I
6.1. Size:145K microsemi
apt94n65b2c3g.pdf
650V 94A APT94N65B2C3 APT94N65B2C3G**G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOSPower Semiconductors Super Junction MOSFET T-MaxTM Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel)G Popular T-MAX PackageSUnless stated otherwise, Microsemi di
7.1. Size:168K apt
apt94n60l2c3.pdf
APT94N60L2C3600V 94A 0.035Super Junction MOSFETTO-264MaxCOOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, QgG Avalanche Energy Rated TO-264 Max PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT94N60L2C3 UNITVDSS Drain-Source Voltage60
7.2. Size:250K microsemi
apt94n60l2c3g.pdf
APT94N60L2C3600V 94A 0.035Super Junction MOSFETTO-264MaxCOOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, QgD Avalanche Energy Rated TO-264 Max PackageGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made withStwo parallel MOSFET die. It
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