APTM100UM65SCAVG Todos los transistores

 

APTM100UM65SCAVG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APTM100UM65SCAVG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 145 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 1068 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 5080 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
   Paquete / Cubierta: MODULE

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APTM100UM65SCAVG Datasheet (PDF)

 0.1. Size:264K  microsemi
aptm100um65scavg.pdf

APTM100UM65SCAVG
APTM100UM65SCAVG

APTM100UM65SCAVGVDSS = 1000V Single switch RDSon = 65m typ @ Tj = 25C Series & SiC parallel diodes ID = 145A @ Tc = 25C MOSFET Power ModuleD Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low g

 7.1. Size:197K  microsemi
aptm100da18ct1g.pdf

APTM100UM65SCAVG
APTM100UM65SCAVG

APTM100DA18CT1GVDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 40A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3NTC- Low RDSon 4Q2- Low input and Miller capacitance - Low gate charge

 7.2. Size:293K  microsemi
aptm100a23sctg.pdf

APTM100UM65SCAVG
APTM100UM65SCAVG

APTM100A23SCTG VDSS = 1000V Phase leg RDSon = 230m typ @ Tj = 25C Series & SiC parallel diodes ID = 36A @ Tc = 25C MOSFET Power Module Application Motor control Switched Mode Power Supplies NTC2 Uninterruptible Power Supplies VBUSFeatures Q1 Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance G1OUT - Low gate charge -

 7.3. Size:298K  microsemi
aptm100h45sctg.pdf

APTM100UM65SCAVG
APTM100UM65SCAVG

APTM100H45SCTG Full bridge VDSS = 1000V RDSon = 450m typ @ Tj = 25C Series & SiC parallel diodes ID = 18A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3AFeatures CR1B CR3B Power MOS 7 MOSFETs Q1 Q3- Low RDSon G1 G3- Low input and Miller capacitance OUT

 7.4. Size:281K  microsemi
aptm100a13scg.pdf

APTM100UM65SCAVG
APTM100UM65SCAVG

APTM100A13SCG VDSS = 1000V Phase leg RDSon = 130m typ @ Tj = 25C Series & SiC parallel diodes ID = 65A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Q1Features G1 Power MOS 7 MOSFETs OUT- Low RDSon S1- Low input and Miller capacitance - Low gate charge Q2

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