APTM120U10SCAVG Todos los transistores

 

APTM120U10SCAVG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APTM120U10SCAVG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3290 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 116 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 4400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

APTM120U10SCAVG Datasheet (PDF)

 0.1. Size:230K  microsemi
aptm120u10scavg.pdf pdf_icon

APTM120U10SCAVG

APTM120U10SCAVG VDSS = 1200V Single switch RDSon = 100m typ @ Tj = 25C Series & SiC parallel diodes ID = 116A @ Tc = 25C MOSFET Power Module D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low

 7.1. Size:191K  microsemi
aptm120da30ct1g.pdf pdf_icon

APTM120U10SCAVG

APTM120DA30CT1G VDSS = 1200V Boost chopper RDSon = 300m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 31A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1Features 3NTC Power MOS 8 MOSFET 4- Low RDSon Q2- Low input and Miller capacitance - Low gate charge

 9.1. Size:264K  microsemi
aptm100um65scavg.pdf pdf_icon

APTM120U10SCAVG

APTM100UM65SCAVGVDSS = 1000V Single switch RDSon = 65m typ @ Tj = 25C Series & SiC parallel diodes ID = 145A @ Tc = 25C MOSFET Power ModuleD Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low g

 9.2. Size:197K  microsemi
aptm100da18ct1g.pdf pdf_icon

APTM120U10SCAVG

APTM100DA18CT1GVDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 40A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3NTC- Low RDSon 4Q2- Low input and Miller capacitance - Low gate charge

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