R5009FNJ MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

R5009FNJ datasheet

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R5009FNJ Datasheet Nch 500V 9A Power MOSFET lOutline l LPT(S) VDSS 500V RDS(on)(Max.) 0.84 ID 9A PD 50W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be

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Data Sheet 10V Drive Nch MOSFET R5009FNX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1)Fast reverse recovery time (trr) 1.2 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. 2.54 2.54 0.75 2.6 4) Gate-source voltage (1) (2) (3) VGSS garanteed to be 30V . 5) Drive circuits can be simple. 6) Parallel use

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10V Drive Nch MOSFET R5009ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.4 0.78 2.7 5.08 4) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Base (Gate) (1) (2) (3) 5) Drive circuits can be simple. (2) Collector (Drain)

9.2. Size:268K rohm
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10V Drive Nch MOSFET R5009ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 1.3 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.8 4) Gate-source voltage (VGSS) guaranteed to be 30V. (1)Base 2.54 2.54 0.75 2.6 5) Drive circuits can be simple. (2)Collector (1) (2) (3) 6) Para

Otros transistores... RDD050N20 , RDN050N20 , RDN100N20 , RDN120N25 , RDN150N20 , RDR005N25 , R5005CNX , R5007FNX , TK10A60D , R5011FNJ , R5016FNJ , R5021ANJ , R520 , R521 , R6002END , R6004END , R6004ENJ .