All MOSFET. R5009FNJ Datasheet

 

R5009FNJ Datasheet and Replacement


   Type Designator: R5009FNJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.84 Ohm
   Package: LPTS
 

 R5009FNJ substitution

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R5009FNJ Datasheet (PDF)

 ..1. Size:3366K  rohm
r5009fnj.pdf pdf_icon

R5009FNJ

R5009FNJDatasheetNch 500V 9A Power MOSFETlOutlinel LPT(S)VDSS 500VRDS(on)(Max.) 0.84 ID 9A PD 50W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe

 7.1. Size:1026K  rohm
r5009fnx.pdf pdf_icon

R5009FNJ

Data Sheet10V Drive Nch MOSFET R5009FNX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1)Fast reverse recovery time (trr) 1.21.32) Low on-resistance.0.83) Fast switching speed.2.54 2.54 0.75 2.64) Gate-source voltage(1) (2) (3) VGSS garanteed to be 30V .5) Drive circuits can be simple.6) Parallel use

 9.1. Size:267K  rohm
r5009anj.pdf pdf_icon

R5009FNJ

10V Drive Nch MOSFET R5009ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.1 4.51.3 Features 1) Low on-resistance. 1.242) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.40.782.75.084) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Base (Gate) (1) (2) (3)5) Drive circuits can be simple. (2) Collector (Drain)

 9.2. Size:268K  rohm
r5009anx.pdf pdf_icon

R5009FNJ

10V Drive Nch MOSFET R5009ANX Structure Dimensions (Unit : mm) TO-220FMSilicon N-channel MOSFET 10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.21.32) Fast switching speed. 3) Wide SOA (safe operating area). 0.84) Gate-source voltage (VGSS) guaranteed to be 30V. (1)Base2.54 2.54 0.75 2.65) Drive circuits can be simple. (2)Collector (1) (2) (3)6) Para

Datasheet: RDD050N20 , RDN050N20 , RDN100N20 , RDN120N25 , RDN150N20 , RDR005N25 , R5005CNX , R5007FNX , IRFZ24N , R5011FNJ , R5016FNJ , R5021ANJ , R520 , R521 , R6002END , R6004END , R6004ENJ .

History: DJR0417 | IRFSL7762 | WML10N70C4 | STP46NF30 | R6524ENJ | OSG50R500AF | STL140N6F7

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