R6004END MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

R6004END datasheet

..1. Size:698K rohm
r6004end.pdf pdf_icon

R6004END Nch 600V 4A Power MOSFET Data Sheet lOutline (2) VDSS 600V CPT3 (SC-63) RDS(on) (Max.) 0.980W ID 4A (1) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy.

7.1. Size:760K rohm
r6004enx.pdf pdf_icon

R6004ENX Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 980mW ID 4A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 20V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead pla

7.2. Size:706K rohm
r6004enj.pdf pdf_icon

R6004ENJ Nch 600V 4A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.980W ID 4A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-fr

7.3. Size:252K inchange semiconductor
r6004enx.pdf pdf_icon

isc N-Channel MOSFET Transistor R6004ENX FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 980m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos