R6004END PDF and Equivalents Search

 

R6004END Specs and Replacement

Type Designator: R6004END

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm

Package: SC-63

R6004END substitution

- MOSFET ⓘ Cross-Reference Search

 

R6004END datasheet

 ..1. Size:698K  rohm
 r6004end.pdf pdf_icon

R6004END

R6004END Nch 600V 4A Power MOSFET Data Sheet lOutline (2) VDSS 600V CPT3 (SC-63) RDS(on) (Max.) 0.980W ID 4A (1) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. ... See More ⇒

 7.1. Size:760K  rohm
 r6004enx.pdf pdf_icon

R6004END

R6004ENX Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 980mW ID 4A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 20V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead pla... See More ⇒

 7.2. Size:706K  rohm
 r6004enj.pdf pdf_icon

R6004END

R6004ENJ Nch 600V 4A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.980W ID 4A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-fr... See More ⇒

 7.3. Size:252K  inchange semiconductor
 r6004enx.pdf pdf_icon

R6004END

isc N-Channel MOSFET Transistor R6004ENX FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 980m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

SHOW MORE

Detailed specifications: R5007FNX, R5009FNJ, R5011FNJ, R5016FNJ, R5021ANJ, R520, R521, R6002END, 10N65, R6004ENJ, R6004ENX, R6007ENJ, R6007ENX, R6009ENJ, R6009ENX, R6011ENJ, R6011ENX

Keywords - R6004END MOSFET specs

 R6004END cross reference

 R6004END equivalent finder

 R6004END pdf lookup

 R6004END substitution

 R6004END replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.