RFD3055LESM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RFD3055LE, RFD3055LESM, RFP3055LEData Sheet January 200211A, 60V, 0.107 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 11A, 60VThese N-Channel enhancement-mode power MOSFETs are rDS(ON) = 0.107manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizes approaching those of LSI

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

RFD3055, RFD3055SMS E M I C O N D U C T O RRFP305512A, 60V, Avalanche Rated, N-ChannelEnhancement-Mode Power MOSFETs (MegaFETs)February 1994Features PackagingJEDEC TO-220AB 12A, 60VTOP VIEW rDS(ON) = 0.150SOURCE Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse Width Curve GATE UIS Rating Curve +175oC Operating TemperatureJED