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RFD3055LESM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RFD3055LESM
   Código: F3055L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 9.4 nC
   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.107 Ohm
   Paquete / Cubierta: TO252AA

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RFD3055LESM Datasheet (PDF)

 ..1. Size:414K  fairchild semi
rfd3055le rfd3055lesm rfp3055le.pdf

RFD3055LESM
RFD3055LESM

RFD3055LE, RFD3055LESM, RFP3055LEData Sheet January 200211A, 60V, 0.107 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 11A, 60VThese N-Channel enhancement-mode power MOSFETs are rDS(ON) = 0.107manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizes approaching those of LSI

 ..2. Size:1299K  onsemi
rfd3055le rfd3055lesm.pdf

RFD3055LESM
RFD3055LESM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:114K  harris semi
rfd3055-sm rfp3055.pdf

RFD3055LESM
RFD3055LESM

RFD3055, RFD3055SMS E M I C O N D U C T O RRFP305512A, 60V, Avalanche Rated, N-ChannelEnhancement-Mode Power MOSFETs (MegaFETs)February 1994Features PackagingJEDEC TO-220AB 12A, 60VTOP VIEW rDS(ON) = 0.150SOURCE Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse Width Curve GATE UIS Rating Curve +175oC Operating TemperatureJED

Otros transistores... RFD16N05 , RFD16N05L , RFD16N05LSM , RFD16N05SM , RFD16N06LE , RFD16N06LESM , RFD3055 , RFD3055LE , IRF1404 , RFD3055SM , RFD3N08L , RFD3N08LSM , RFD4N06L , RFD4N06LSM , RFD7N10LE , RFD7N10LESM , RFD8P05 .

 

 
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