R6012FNJ Todos los transistores

 ..1. Size:831K  rohm
 r6012fnj.pdf

R6012FNJ Nch 600V 12A Power MOSFET Datasheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.51W ID 12A (1) PD 50W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-fre

 7.1. Size:1244K  rohm
 r6012fnx.pdf

Data Sheet 10V Drive Nch MOSFET R6012FNX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1) Fast reverse recovery time (trr) 1.2 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. 2.54 2.54 0.75 2.6 4) Gate-source voltage (1) (2) (3) VGSS garanteed to be 30V . 5) Drive circuits can be simple. 6) Parallel us

 9.1. Size:1019K  rohm
 r6012anx.pdf

R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline TO-220FM VDSS 600V RDS(on) (Max.) 0.42 ID 12A PD 50W (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead

 9.2. Size:321K  rohm
 r6012anj.pdf

10V Drive Nch MOSFET R6012ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 2.54 0.4 0.78 4) Drive circuits can be simple. 2.7 5.08 5) Parallel use is easy. (1) Gate (1) (2) (3) (2) Drain (3) Source Each lead has same