R6012FNJ Datasheet and Replacement

R6012FNJ Nch 600V 12A Power MOSFET DatasheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.51WID12A(1) PD50W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-fre

Data Sheet10V Drive Nch MOSFET R6012FNX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1) Fast reverse recovery time (trr) 1.21.32) Low on-resistance.0.83) Fast switching speed.2.54 2.54 0.75 2.64) Gate-source voltage(1) (2) (3) VGSS garanteed to be 30V .5) Drive circuits can be simple.6) Parallel us

R6012ANXNch 600V 12A Power MOSFET DatasheetOutline TO-220FMVDSS600VRDS(on) (Max.)0.42ID12APD50W(1)(2)(3) Features Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead

10V Drive Nch MOSFET R6012ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.14.51.3 Features 1) Low on-resistance. 1.242) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 2.54 0.40.784) Drive circuits can be simple. 2.75.085) Parallel use is easy. (1) Gate(1) (2) (3)(2) Drain(3) SourceEach lead has same