R6020FNJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6020FNJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 80 nS
Cossⓘ - Capacitancia de salida: 1450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: LPTS
Búsqueda de reemplazo de R6020FNJ MOSFET
- Selecciónⓘ de transistores por parámetros
R6020FNJ datasheet
..1. Size:3255K rohm
r6020fnj.pdf 
R6020FNJ Datasheet Nch 600V 20A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.28 ID 20A PD 50W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to
7.1. Size:1274K rohm
r6020fnx.pdf
Data Sheet 10V Drive Nch MOSFET R6020FNX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Fast reverse recovery time (trr) 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain 4) Gate-source voltage (1) (2) (3) (3) Source VGSS garanteed to be 30V . 5) Drive circuit
9.1. Size:1588K rohm
r6020enx.pdf
R6020ENX Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.20W ID 20A (3) PD 50W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 20V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead p
9.2. Size:1614K rohm
r6020knx.pdf
R6020KNX Datasheet Nch 600V 20A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.196 TO-220FM ID 20A PD 68W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub
9.3. Size:1704K rohm
r6020anx.pdf
R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline TO-220FM VDSS 600V RDS(on) (Max.) 0.22 ID 20A PD 50W (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead
9.4. Size:1153K rohm
r6020anz.pdf
Data Sheet 10V Drive Nch MOSFET R6020ANZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain Application 5.45 5.45 (3) Source Switching Packaging specifications Inner circuit Package Bulk Type
9.5. Size:861K rohm
r6020enz1.pdf
R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.196W ID 20A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea
9.6. Size:2176K rohm
r6020knz1.pdf
R6020KNZ1 Datasheet Nch 600V 20A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.196 TO-247 ID 20A PD 231W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lA
9.7. Size:1443K rohm
r6020knj.pdf
R6020KNJ Datasheet Nch 600V 20A Power MOSFET lOutline l TO-263S VDSS 600V SC-83 RDS(on)(Max.) 0.196 LPT(S) ID 20A PD 231W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embossed Packin
9.8. Size:853K rohm
r6020enj.pdf
R6020ENJ Nch 600V 20A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.196W ID 20A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-
9.9. Size:2192K rohm
r6020knz.pdf
R6020KNZ Datasheet Nch 600V 20A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.196 TO-3PF ID 20A PD 68W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lApp
9.10. Size:896K rohm
r6020enz.pdf
R6020ENZ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.196W ID 20A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead
9.11. Size:1355K rohm
r6020knz4.pdf
R6020KNZ4 Datasheet Nch 600V 20A Power MOSFET lOutline l TO-247 VDSS 600V RDS(on)(Max.) 0.196 ID 20A PD 231W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packi
9.12. Size:231K rohm
r6020anj.pdf
10V Drive Nch MOSFET R6020ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 1.24 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.54 0.4 5) Parallel use is easy. 0.78 2.7 5.08 (1) Base (Gate) (1) (2) (3) (2) Collector (Drain) Application
9.13. Size:251K inchange semiconductor
r6020enx.pdf
isc N-Channel MOSFET Transistor R6020ENX FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
9.14. Size:252K inchange semiconductor
r6020knx.pdf
isc N-Channel MOSFET Transistor R6020KNX FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
9.15. Size:377K inchange semiconductor
r6020enz1.pdf
isc N-Channel MOSFET Transistor R6020ENZ1 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
9.16. Size:377K inchange semiconductor
r6020knz1.pdf
isc N-Channel MOSFET Transistor R6020KNZ1 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
9.17. Size:255K inchange semiconductor
r6020knj.pdf
isc N-Channel MOSFET Transistor R6020KNJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
9.18. Size:254K inchange semiconductor
r6020enj.pdf
isc N-Channel MOSFET Transistor R6020ENJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
9.19. Size:265K inchange semiconductor
r6020knz.pdf
isc N-Channel MOSFET Transistor R6020KNZ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
9.20. Size:265K inchange semiconductor
r6020enz.pdf
isc N-Channel MOSFET Transistor R6020ENZ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
Otros transistores... R6015ENJ
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