R6020FNJ - описание и поиск аналогов

R6020FNJ Datasheet Nch 600V 20A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.28 ID 20A PD 50W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to

Data Sheet 10V Drive Nch MOSFET R6020FNX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Fast reverse recovery time (trr) 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain 4) Gate-source voltage (1) (2) (3) (3) Source VGSS garanteed to be 30V . 5) Drive circuit

R6020ENX Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.20W ID 20A (3) PD 50W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 20V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead p

R6020KNX Datasheet Nch 600V 20A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.196 TO-220FM ID 20A PD 68W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub

R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline TO-220FM VDSS 600V RDS(on) (Max.) 0.22 ID 20A PD 50W (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead

Data Sheet 10V Drive Nch MOSFET R6020ANZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain Application 5.45 5.45 (3) Source Switching Packaging specifications Inner circuit Package Bulk Type

R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.196W ID 20A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

R6020KNZ1 Datasheet Nch 600V 20A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.196 TO-247 ID 20A PD 231W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lA

R6020KNJ Datasheet Nch 600V 20A Power MOSFET lOutline l TO-263S VDSS 600V SC-83 RDS(on)(Max.) 0.196 LPT(S) ID 20A PD 231W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embossed Packin

R6020ENJ Nch 600V 20A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.196W ID 20A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-

R6020KNZ Datasheet Nch 600V 20A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.196 TO-3PF ID 20A PD 68W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lApp

R6020ENZ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.196W ID 20A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

R6020KNZ4 Datasheet Nch 600V 20A Power MOSFET lOutline l TO-247 VDSS 600V RDS(on)(Max.) 0.196 ID 20A PD 231W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packi

10V Drive Nch MOSFET R6020ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 1.24 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.54 0.4 5) Parallel use is easy. 0.78 2.7 5.08 (1) Base (Gate) (1) (2) (3) (2) Collector (Drain) Application

isc N-Channel MOSFET Transistor R6020ENX FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6020KNX FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6020ENZ1 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor R6020KNZ1 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor R6020KNJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6020ENJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6020KNZ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6020ENZ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo