R6035ENZ1 Todos los transistores

 ..1. Size:918K  rohm
 r6035enz1.pdf

R6035ENZ1 Nch 600V 35A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.102W ID 35A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

 ..2. Size:304K  inchange semiconductor
 r6035enz1.pdf

isc N-Channel MOSFET Transistor R6035ENZ1 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 102m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 6.1. Size:929K  rohm
 r6035enz.pdf

R6035ENZ Nch 600V 35A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.102W ID 35A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

 6.2. Size:265K  inchange semiconductor
 r6035enz.pdf

isc N-Channel MOSFET Transistor R6035ENZ FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 102m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:1687K  rohm
 r6035knz1.pdf

R6035KNZ1 Datasheet Nch 600V 35A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.102 TO-247 ID 35A PD 379W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lA

 9.2. Size:2172K  rohm
 r6035knz.pdf

R6035KNZ Datasheet Nch 600V 35A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.102 TO-3PF ID 35A PD 102W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lAp

 9.3. Size:304K  inchange semiconductor
 r6035knz1.pdf

isc N-Channel MOSFET Transistor R6035KNZ1 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 102m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.4. Size:266K  inchange semiconductor
 r6035knz.pdf

isc N-Channel MOSFET Transistor R6035KNZ FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 102m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp