R6035ENZ1
MOSFET. Datasheet pdf. Equivalent
Type Designator: R6035ENZ1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 110
nC
trⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 2000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.102
Ohm
Package:
TO-247
R6035ENZ1
Datasheet (PDF)
..1. Size:918K rohm
r6035enz1.pdf 
R6035ENZ1 Nch 600V 35A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.102WID35A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
..2. Size:304K inchange semiconductor
r6035enz1.pdf
isc N-Channel MOSFET Transistor R6035ENZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
6.1. Size:929K rohm
r6035enz.pdf
R6035ENZ Nch 600V 35A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.102WID35A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
6.2. Size:265K inchange semiconductor
r6035enz.pdf
isc N-Channel MOSFET Transistor R6035ENZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.1. Size:1687K rohm
r6035knz1.pdf
R6035KNZ1DatasheetNch 600V 35A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.102 TO-247ID35APD 379W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA
9.2. Size:2172K rohm
r6035knz.pdf
R6035KNZDatasheetNch 600V 35A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.102 TO-3PFID35APD 102W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lAp
9.3. Size:304K inchange semiconductor
r6035knz1.pdf
isc N-Channel MOSFET Transistor R6035KNZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
9.4. Size:266K inchange semiconductor
r6035knz.pdf
isc N-Channel MOSFET Transistor R6035KNZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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