R6047ENZ1 Todos los transistores

 

R6047ENZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: R6047ENZ1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 2950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: TO-247
     - Selección de transistores por parámetros

 

R6047ENZ1 Datasheet (PDF)

 ..1. Size:910K  rohm
r6047enz1.pdf pdf_icon

R6047ENZ1

R6047ENZ1 Nch 600V 47A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.072WID47A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

 ..2. Size:303K  inchange semiconductor
r6047enz1.pdf pdf_icon

R6047ENZ1

isc N-Channel MOSFET Transistor R6047ENZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 72m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:2283K  rohm
r6047mnz1.pdf pdf_icon

R6047ENZ1

R6047MNZ1DatasheetNch 600V 47A Power MOSFETlOutlinelVDSS600VRDS(on)(Max.) 0.081 TO-247ID 47APD440W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.6) Pb-free p

 9.2. Size:304K  inchange semiconductor
r6047mnz1.pdf pdf_icon

R6047ENZ1

isc N-Channel MOSFET Transistor R6047MNZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 81m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMK28N50C4 | OSG80R900FF | HM4612 | KPCF8402 | P9515BD | AP9563GK | IRFSL31N20DP

 

 
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