R6047ENZ1 Todos los transistores

 ..1. Size:910K  rohm
 r6047enz1.pdf

R6047ENZ1 Nch 600V 47A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.072W ID 47A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

 ..2. Size:303K  inchange semiconductor
 r6047enz1.pdf

isc N-Channel MOSFET Transistor R6047ENZ1 FEATURES Drain Current I = 47A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 72m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:2283K  rohm
 r6047mnz1.pdf

R6047MNZ1 Datasheet Nch 600V 47A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.081 TO-247 ID 47A PD 440W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Pb-free p

 9.2. Size:304K  inchange semiconductor
 r6047mnz1.pdf

isc N-Channel MOSFET Transistor R6047MNZ1 FEATURES Drain Current I = 47A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 81m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp