R6047ENZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

R6047ENZ1 Datasheet (PDF)

..1. Size:910K rohm
r6047enz1.pdf pdf_icon

R6047ENZ1 Nch 600V 47A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.072WID47A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

..2. Size:303K inchange semiconductor
r6047enz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6047ENZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 72m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.1. Size:2283K rohm
r6047mnz1.pdf pdf_icon

R6047MNZ1DatasheetNch 600V 47A Power MOSFETlOutlinelVDSS600VRDS(on)(Max.) 0.081 TO-247ID 47APD440W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.6) Pb-free p

9.2. Size:304K inchange semiconductor
r6047mnz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6047MNZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 81m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... R6030ENX , R6030ENZ , R6030ENZ1 , R6035ENZ , R6035ENZ1 , R6046ANZ1 , R6046FNZ1 , R6046FNZC8 , AO4468 , R6076ENZ1 , R8005ANX , R8010ANX , R9521 , R9522 , 2SJ455 , 2SK0123 , BSC0906NS .